ExamPat

Micron Technology, Inc.

Ex parte reexamination requester·16 ex parte reexams

Micron Technology, Inc. has requested 16 USPTO ex parte reexaminations, with 13 currently open. It most often challenges patents owned by Yangtze Memory Technologies Co., Ltd., Advanced Memory Technologies LLC, and ADVANCED DATA ACCESS LLC. ExamPat indexes the full prosecution record for each proceeding, including office-action grounds, certificate outcomes, and downstream PTAB and Federal Circuit decisions.

Filings by year

2
12
14
26

Top patent owners challenged

Outcome track record

How this requester's challenges resolve: claims confirmed, amended, mixed, or fully canceled.

  • Certificate outcome split across every bucket
  • Share of challenges that canceled claims

Challenge metrics

Cancellation rate, average pendency, and the open/closed split across every reexam this requester has filed.

  • Outcome rate of closed challenges
  • Average pendency in months

Examiners & defense counsel

Which examiners decide this requester's challenges, and which firms defend the targeted patents.

  • Most frequent examiners
  • Top opposing counsel

Recent reexaminations (16)

Control #FiledPatentTitleOwnerStatus
90/016,524Aug 14, 20268,593,888SEMICONDUCTOR MEMORY DEVICEAdvanced Memory Technologies LLCOpen
90/016,448Jul 6, 202612,254,925CONTROL METHOD AND CONTROLLER OF 3D NAND FLASHYangtze Memory Technologies Co., Ltd.Open
90/016,440Jul 1, 202612,266,403THREE-DIMENSIONAL NAND MEMORY AND FABRICATION METHOD THEREOFYangtze Memory Technologies Co., Ltd.Open
90/016,418Jun 25, 202612,373,366MEMORY WITH ON-MODULE POWER MANAGEMENTNetlist, Inc.Closed
90/016,413Jun 23, 20268,519,778SEMICONDUCTOR INTEGRATED CIRCUIT AND BOOSTER CIRCUIT INCLUDING THE SAMEAdvanced Memory Technologies LLCOpen
90/016,393Jun 12, 202610,707,851DOUBLE DATA RATE CIRCUIT AND DATA GENERATION METHOD IMPLEMENTING PRECISE DUTY CYCLE CONTROLYangtze Memory Technologies Co., Ltd.Open
90/016,390Jun 10, 202611,233,066THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAMEYangtze Memory Technologies Co., Ltd.Open
90/016,351May 29, 20267,920,018BOOSTER CIRCUITAdvanced Memory Technologies LLCOpen
90/016,352May 29, 20267,777,557BOOSTER CIRCUITAdvanced Memory Technologies LLCOpen
90/016,327May 21, 202612,094,767BARRIER LAYERS FOR WORD LINE CONTACTS IN A THREE-DIMENSIONAL NAND MEMORY AND FABRICATION METHODS THEREOFYangtze Memory Technologies Co., Ltd.Open
90/016,290May 15, 202612,232,313STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAMEYangtze Memory Technologies Co., Ltd.Open
90/016,268May 12, 20267,969,231INTERNAL VOLTAGE GENERATING CIRCUITAdvanced Memory Technologies LLCOpen
90/016,100Mar 30, 202612,075,621THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAMEYangtze Memory Technologies Co., Ltd.Open
90/016,099Mar 30, 202612,068,2503D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAMEYangtze Memory Technologies Co., Ltd.Open
90/012,703Oct 12, 20125,781,497RANDOM ACCESS MEMORY WORD LINE SELECT CIRCUIT HAVING RAPID DYNAMIC DESELECTADVANCED DATA ACCESS LLCClosed
90/012,480Sep 10, 20125,672,535METHOD OF FABRICATING DRAM CELL WITH SELF-ALIGNED CONTACTADVANCED DATA ACCESS LLCClosed

Other reexam requesters

See the full reexam picture for Micron Technology, Inc.

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